09:45 〜 10:00
▼ [18a-D519-4] XANES, EXAFS, and XPS study of the atomic structures and chemical states of active and inactive dopant sites in 4H-SiC(0001)
キーワード：4H-SiC, XANES, EXAFS
Silicon carbide (SiC) is an attractive semiconductor material for a new generation of high-voltage power, high frequency, and high-temperature electronic devices. SiC crystals have many polytypes. 4H-SiC has received the most attention due to its larger bandgap (3.2 eV). It is therefore the hottest research focus in recent years. Nitrogen (N) is usually used for n-type doping whereas aluminum (Al) is used as the p-type dopant in 4H-SiC.
Therefore, it is crucial to investigate the chemical states and atomic structures of active and inactive dopant sites in N-doped and Al-doped 4H-SiC. In the present study, the atomic structure and chemical states of active and inactive dopant sites in 4H-SiC were investigated by XANES, EXAFS, and XPS.
In N-doped 4H-SiC(0001), the concentration of N-dopants was ~1.0 x 1019 cm-3, while the concentration of Al-dopants was ~1.0 x 1020 cm-3 in Al-doped 4H-SiC(0001). The XANES and XAFS measurements were performed at Aichi synchrotron radiation center.
Therefore, it is crucial to investigate the chemical states and atomic structures of active and inactive dopant sites in N-doped and Al-doped 4H-SiC. In the present study, the atomic structure and chemical states of active and inactive dopant sites in 4H-SiC were investigated by XANES, EXAFS, and XPS.
In N-doped 4H-SiC(0001), the concentration of N-dopants was ~1.0 x 1019 cm-3, while the concentration of Al-dopants was ~1.0 x 1020 cm-3 in Al-doped 4H-SiC(0001). The XANES and XAFS measurements were performed at Aichi synchrotron radiation center.