10:30 〜 10:45
▲ [18a-D519-6] Observation of Electronic States in Sb-doped ZrTe5
キーワード：electronic state, angle-resolved photoemission spectroscopy
The topological character of zirconium pentatelluride (ZrTe5) has triggered new studies to understand the origin of its properties through the band structure of its surface [1]. Studies in the past years have succeeded in proving some of the exotic properties of ZrTe5 through its electrical resistance and magnetic susceptibility [2,3] and its band structure [4]. Unfortunately, unanimous consensus on band structure versus temperature results has not been reached so that evidence generated from direct experiments to support this theory is still lacking which necessitates the development of further research. Previous investigations of the band structure have revealed a shift of the band towards binding energies in temperature with the range of 125-300 Kelvin [5]. Since ZrTe5 doped with antimony (Sb) is still lacking, we focused on investigating the new structure of ZrTe5 doped with Sb. It is expected that a band shift will be formed from ZrTe5 with Sb doping. In this study, we measured Sb-doped ZrTe5 and observed the surface electronic state using angle-resolved photoemission spectroscopy (ARPES). In this study, we provide information on the band structure of non-doped ZrTe5 and Sb-doped ZrTe5 with variations in photon energy and temperature. Photon energy variations include 66 electronvolt to 75 electronvolt. Meanwhile, temperature variations are in the range of 20 Kelvin to 100 Kelvin for non-doped ZrTe5 and 8 Kelvin to 45 Kelvin for Sb-doped ZrTe5. This study also provides a comparison of the momentum distribution curve and energy distribution curve to prove the temperature dependence of non-doped ZrTe5 and Sb-doped ZrTe5.