[1Dp01-13] TF/SE/EMP/MI/MS

[1Dp10] Mass production technology of PbZrTiO₃ by sputtering method for piezoelectric MEMS devices

*Hiroki Kobayashi¹, Kouhei Matsuoka¹, Tatsurou Tsuyuki¹, Isao Kimura¹, Takehito Jimbo¹ (1. ULVAC Inc.)

Recently, the integration of CMOS and the Piezo-MEMS device is demanded to realize device size reduction and multi-functionality simultaneously. In order to fabricate CMOS-Integrated Piezo-MEMS devices, the low temperature crystallization technique of PZT film is required (< 500℃) because of the limitation of thermal budget for MEMS processing. We have succeeded to establish the low temperature crystallization technique of PZT film at 485℃. We will present electrical/piezoelectrical properties and mass production technology of PZT film.