[1P01-52] Poster Presentation

[1P38] N₂ partial pressure dependence of magnetic properties of FeGaN films

*Tatsuki Hino¹, Kazuho Suzuki¹, Yuji Fujiwara¹, Mutsuko Jimbo¹, Daiki Oshima², Takeshi Kato² (1. Mie University, 2. Nagoya University)

FeGa films are promising materials for high-frequency applications. However, improvement of soft magnetic properties is required. To improve soft magnetic properties, we try to introduce Nitrogen into FeGa film. The FeGaN films were prepared by magnetron sputtering method. The sputtering gas was a mixture of Ar and N₂ gas, a partial pressure ratio P_N2 / P_Total, where P_N2 is the partial pressure of N₂ and P_Total is the total gas pressure, was controlled. The magnetic properties were investigated by vibrating sample magnetometer and torque magnetometer. The coercive force decreased with increasing P_N2 / P_Total, and showed the minimum value of about 1.3 Oe. The saturation magnetostriction increased with increasing P_N2 / P_Total, and showed the maximum value of about 30ppm. The minimum coercive force and the maximum saturation magnetostriction were obtained at P_N2 / P_Total = 0.135, simultaneously.