[1P01-52] Poster Presentation

[1P51] The magnetic behaviors of Ni/ZnO bilayers under voltage applications

*Cho-Min Huang¹, Chin-Chung Yu¹, Bo-Cia Chen¹, Zheng-Wei Lin¹ (1. Department of Applied Physics, National University of Kaohsiung, Kaohsiung, Taiwan)

The Ni/ZnO bilayer films were grown on Si(100) substrates using radio frequency magnetron sputtering. A perpendicular magnetic anisotropy of Ni film was observed for the thickness and deposition temperature of ZnO underlayer higher than 350^oC and 400nm, respectively. The texture and roughness of the ZnO(0001) underlayer assists the formation of the Ni fcc(111) which is the magnetic easy axis. Furthermore, an exchange field of about 50 Oe was observed, which indicated an antiferromagnetic NiO layer was formed between the Ni and ZnO layers. The exchange field varied with the leakage current while applying a bias voltage between the bilayers. The thermal and strain effects are two key factors for the voltage control magnetic behavior in the Ni/ZnO bilayers.