[D3-PR13] Slot 13

[D3-PR13-01] High-purity bulk synthesis and electronic properties of a two-dimensional layered semiconductor, alkaline earth transition metal nitrides

*Shigeru Kimura¹, Akihiro Shiraishi¹, Xinyi He¹, Takayoshi 2 Katase¹, keisuke Ide¹, Hidenori Hiramatsu¹, Hideo Hosono¹, Toshio Kamiya¹ (1. Tokyo Institute of Technology (Japan))

キーワード：Ternary transition metal nitride, carrier transport property, defect calculation