N2/SiH4 flow rate ratio dependence of nanoparticle incorporation in SiNx films deposited by plasma CVD

Masaharu Shiratani

Presentation information

Oral Session

H. Innovative Materials Processing for Sustainable Society » [H-2] Plasma-Based Synthesis, Processing and Characterization of Materials for Energy and Environment

[H2-O10] Slot 10

Thu. Dec 16, 2021 4:00 PM - 6:00 PM Room E (G416+417)

Chair: Giichiro Uchida

5:30 PM - 5:45 PM

[H2-O10-06] N₂/SiH₄ flow rate ratio dependence of nanoparticle incorporation in SiN_x films deposited by plasma CVD

*Masaharu Shiratani¹, Yusuke Sasaki¹, Kunihiro Kamataki¹, Naho Itagaki¹, Kazunori Koga¹ (1. Kyushu Univ. (Japan))

Keywords:plasma CVD, SiNx film, nanoparticle

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Presentation information

[H2-O10] Slot 10

[H2-O10-06] N2/SiH4 flow rate ratio dependence of nanoparticle incorporation in SiNx films deposited by plasma CVD

[H2-O10-06] N₂/SiH₄ flow rate ratio dependence of nanoparticle incorporation in SiN_x films deposited by plasma CVD