Oral Session

S. Co-Sponsored Topics » [S-2] 9th International Symposium on Transparent Conductive Materials & 13th International Symposium on Transparent Oxide and Related Materials for Electronics and Optics (TCM-TOEO 2023)

[S2-O202] Oral 202

2023年12月12日(火) 14:00 〜 16:00 Session 1 (Room C-1)

Chair: Daniel Gloess (Fraunhofer FEP), David Samuel Ginley (NREL)

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14:00 〜 14:30

[S2-O202-01 (Symposium Invited)] Engineering Liquid Metal Printed 2D Semiconducting Oxide Heterostructures

*William J Scheideler¹, Andrew B. Hamlin¹, Simon A. Agnew¹ (1. Dartmouth College (United States of America))

14:30 〜 15:00

[S2-O202-02 (Symposium Invited)] Poly-OS IGO for high mobility TFT applications

*Yuki Tsuruma¹, Hisanori Nagatomi¹, Nobuhiro Iwase¹, Koji Yamaguchi¹, Daichi Sasaki¹, Emi Kawashima¹, Akira Kaijo¹, Kazuyoshi Inoue¹ (1. Idemitsu Kosan Co., Ltd. (Japan))

15:00 〜 15:15

[S2-O202-03] Strong Dependence of Solid-Phase Crystallization Atmosphere on the Performance of In₂O₃:H Thin Film Transistors

*Yusaku Magari¹, Prashant Ghediya¹, Yuqiao Zhang^2,3, Yasutaka Matsuo¹, Mamoru Furuta⁴, Hiromichi Ohta¹ (1. Hokkaido Univ. (Japan), 2. Jiangsu Univ. (China), 3. Foshan Instit. for New Materials (China), 4. Kochi Univ. of Tech. (Japan))

15:15 〜 15:30

[S2-O202-04] Origin of the Instability of High-Mobility Polycrystalline In₂O₃:H-based Thin Film Transistors

*Prashant Ghediya¹, Yusaku Magari¹, Yuqiao Zhang^2,3, Yasutaka Matsuo¹, Hiromichi Ohta¹ (1. RIES, Hokkaido Univ. (Japan), 2. IQST, Jiangsu Univ. (China), 3. Foshan Inst. for New Materials (China))

15:30 〜 16:00

[S2-O202-05 (Symposium Invited)] Oxide Field-effect Transistors with Adaptable Functionality

*chuan liu¹ (1. Sun Yat-sen University (China))

セッション情報

[S2-O202] Oral 202

[S2-O202-01 (Symposium Invited)] Engineering Liquid Metal Printed 2D Semiconducting Oxide Heterostructures

[S2-O202-02 (Symposium Invited)] Poly-OS IGO for high mobility TFT applications

[S2-O202-03] Strong Dependence of Solid-Phase Crystallization Atmosphere on the Performance of In₂O₃:H Thin Film Transistors

[S2-O202-04] Origin of the Instability of High-Mobility Polycrystalline In₂O₃:H-based Thin Film Transistors

[S2-O202-05 (Symposium Invited)] Oxide Field-effect Transistors with Adaptable Functionality

認証

セッション情報

[S2-O202] Oral 202

[S2-O202-01 (Symposium Invited)] Engineering Liquid Metal Printed 2D Semiconducting Oxide Heterostructures

[S2-O202-02 (Symposium Invited)] Poly-OS IGO for high mobility TFT applications

[S2-O202-03] Strong Dependence of Solid-Phase Crystallization Atmosphere on the Performance of In2O3:H Thin Film Transistors

[S2-O202-04] Origin of the Instability of High-Mobility Polycrystalline In2O3:H-based Thin Film Transistors

[S2-O202-05 (Symposium Invited)] Oxide Field-effect Transistors with Adaptable Functionality

認証

[S2-O202-03] Strong Dependence of Solid-Phase Crystallization Atmosphere on the Performance of In₂O₃:H Thin Film Transistors

[S2-O202-04] Origin of the Instability of High-Mobility Polycrystalline In₂O₃:H-based Thin Film Transistors