Magnetron Sputter Epitaxy: High-rate growth of wide and ultra-wide band gap semiconductors

Alexander Hinz

講演情報

Oral Session

S. Co-Sponsored Topics » [S-2] 9th International Symposium on Transparent Conductive Materials & 13th International Symposium on Transparent Oxide and Related Materials for Electronics and Optics (TCM-TOEO 2023)

[S2-O203] Oral 203

2023年12月12日(火) 16:30 〜 18:30 Session 1 (Room C-1)

Chair: Julia E Medvedeva (Missouri S&T), KIN MAN Yu (City University of Hong Kong)

17:15 〜 17:45

[S2-O203-02 (Symposium Invited)] Magnetron Sputter Epitaxy: High-rate growth of wide and ultra-wide band gap semiconductors

Alexander Hinz^1,2, *Daniel Gloess¹, Katrin Pingen¹, Dominic Hecker¹, Jörg Neidhardt¹, Elizabeth von Hauff^1,2 (1. Fraunhofer FEP (Germany), 2. Technische Universität Dresden (Germany))

キーワード：magnetron sputter epitaxy, wide band gap, power electronics

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