[S2-P304] Poster 304

[S2-P304-35] Novel solvent-assisted vacancy engineering in MoS₂ and its application in memory devices

*Jiyeon Kim¹, Jae Hak Lee¹, Minho Jin¹, Haeyeon Lee¹, Ji Soo Kim¹, Jiho Lee¹, Jong Chan Shin¹, Chan Lee¹, Wonho You¹, Hyunkyu Yang¹ (1. Seoul National Univ. (Korea))

キーワード：synaptic memristor, vacancy engineering, sulfur vacancy, transition metal dichalcogenides, polarity