Formation process of asymmetric grain boundaries acting as dislocation sources in silicon revealed by STEM at elevated temperatures

YUTAKA OHNO

[A1-P304-06] Formation process of asymmetric grain boundaries acting as dislocation sources in silicon revealed by STEM at elevated temperatures

*YUTAKA OHNO¹, Hikaru Saito², Jianbo Liang³, Tatsuya Yokoi⁴, Katsuyuki Matsunaga⁴, Naoteru Shigekawa³, Koji Inoue¹, Yasuyoshi Nagai¹, Satoshi Hata⁵ (1. IMR, Tohoku Univ. (Japan), 2. OMCE, Kusyu Univ. (Japan), 3. GSE, OMU (Japan), 4. GSE, Nagoya Univ. (Japan), 5. IGSES, Kushu Univ. (Japan))

キーワード：Grain boundaries, Silicon, dislocation sources, STEM

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[A1-P304] Poster 304

[A1-P304-06] Formation process of asymmetric grain boundaries acting as dislocation sources in silicon revealed by STEM at elevated temperatures