Fabrication of uniaxially oriented β-Ga<sub>2</sub>O<sub>3</sub> thin films on flexible polymer substrates by UV laser annealing at room temperature

Ryoya Kai

[G4-P401-13] Fabrication of uniaxially oriented β-Ga₂O₃ thin films on flexible polymer substrates by UV laser annealing at room temperature

*Ryoya Kai¹, Tomoaki Oga¹, Satoru Kaneko^1,2, Mamoru Yoshimoto¹, Akifumi Matsuda¹ (1. Tokyo Inst. of Tech. (Japan), 2. Kanagawa Inst. of Indus. Sci. and Tech. (Japan))

キーワード：Wide-bandgap semiconductor, Gallium oxide, Excimer laser annealing

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講演情報

[G4-P401] Poster 401

[G4-P401-13] Fabrication of uniaxially oriented β-Ga₂O₃ thin films on flexible polymer substrates by UV laser annealing at room temperature

講演情報

[G4-P401] Poster 401

[G4-P401-13] Fabrication of uniaxially oriented β-Ga2O3 thin films on flexible polymer substrates by UV laser annealing at room temperature

[G4-P401-13] Fabrication of uniaxially oriented β-Ga₂O₃ thin films on flexible polymer substrates by UV laser annealing at room temperature