Short Presentation

[LEDIA-SP-01] Demonstration of high aspect ratio etching by Ni mask process for μ-LED monolithic integration

*Haruto Fujii¹, Takeyoshi Onuma¹, Tomohiro Yamaguchi¹, Tohru Honda¹ (1. Kogakuin University)

Monolithically integrated μ-LED displays were investigated. The Ni mask process, in which SiO₂ and Ni were deposited on the GaN template, realized a high aspect ratio etching without changing etching conditions.