Short Presentation

[LEDIA-SP-03] Investigation of sidewall-surface recombination using InGaN based blue and red micro-LEDs

*Heajeong Cheong^1,2,3, Jeong-Hwan Park³, Markus Pristovsek², Woong Kown¹, Hiroshi Amano^1,2,3,4 (1. Graduate School of Engineering, Nagoya University, 2. CIRFE, Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, 3. Venture Business Laboratory, Deep Tech Serial Innovation Center, Nagoya University, 4. Institute for Advanced Research (IAR), Nagoya University )

As for the red emission source in µLEDs display system, AlGaInP-based and InGaN-based µLEDs are competing. Here, we reveal that the detailed mechanism why the sidewall-surface recombination occurs, and which parameter determines the carrier loss through a comparison between InGaN-based blue and red µLEDs, which have not been covered in any other reports to date.