Short Presentation

[LEDIA-SP-04] High-efficiency InGaN tunnel-junction laser diode

*Sung-Un Kim¹, Dae-Young Um¹, Jeong-Kyun Oh¹, Vignesh Veeramuthu¹, Cheul-Ro Lee¹, Yong-Ho Ra¹ (1. Jeonbuk National University)

We fabricated a 5x5μm² sized GaN nanorod photonic crystal laser diode (LD). This LD demonstrated a turn-on voltage of ~2.5 V and lasing wavelength at ~502 nm with a FWHM of ~1 nm.