Short Presentation

[LEDIA-SP-09] Enhancing carrier transport and capture with a good current spreading characteristic via graphene quantum dots in InGaN/GaN multiple-quantum-well light emitting diodes

*Shih-Wei Feng¹, S. K. Fung¹, C. Y. Tsai¹, J. L. Shen², H. C. Wang³, J. Han⁴ (1. Department of Applied Physics, National University of Kaohsiung, 2. Department of Physics and Center for Nanotechnology, Chung Yuan Christian University, 3. Department of Mechanical Engineering and Advanced Institute of Manufacturing with High-tech Innovations, National Chung Cheng University, 4. Department of Electrical Engineering, Yale University)

InGaN-based LEDs with graphene quantum dots (GQDs) are studied with time-resolved electroluminescence measurements. The shorter response, rise, delay, and recombination times of the LEDs with GQDs provide more efficient carrier injection, transport, relaxation, and recombination.