Short Presentation

[LEDIA-SP-16] Vacancies in III-Nitrides (II): Diffusion near Hetero Interfaces

*R. Shimauchi¹, Y. Kangawa^1,2, A. Kusaba^1,2 (1. Interdisciplinary Graduate School of Engineering Sciences, 2. Research Institute for Applied Mechanics, Kyushu University)

Atomically flat heterointerfaces are required to fabricate high-brightness and long-lifetime optical devices such as LEDs and LDs. In this presentation, the deterioration mechanism of sharp heterointerfaces due to vacancy diffusion is discussed.