Short Presentation

[LEDIA-SP-18] RF-MBE growth of AlGaN on low-dislocation-density AlN template substrates

*R. Kasai¹, R. Tanaka¹, M. Deura², M. Urushiyama³, R. Akaike³, T. Nakamura^3,4, H. Miyake³, T. Araki¹ (1. Col. of Sci. & Eng., 2. R-GIRO, Ritsumeikan Univ., 3. Grad. Sch. of Eng., 4. MRPCO, Mie Univ.)

We investigated growth temperature dependence of crystal properties of AlGaN films grown on low-dislocation-density AlN template substrates using RF-MBE. Crystal coherency improved at higher temperature while the Al content was almost constant.