UV devices (1)

[LEDIA2-02] Design of UV LEDs based on ultrathin GaN quantum wells emitting below 240 nm

*A. Izumi¹, K. Shojiki¹, M. Funato¹, Y. Kawakami¹ (1. Department of Electronic Science and Engineering, Kyoto University)

Ultrathin GaN/Al(Ga)N quantum wells are investigated for far UVC LEDs. Based on simulations, one monolayer GaN/Al0.9Ga0.1N quantum wells emitting below 240 nm are successfully fabricated by metalorganic vapor phase epitaxy.