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[LEDIA4-04] Deep and Shallow Etching of AlGaN/GaN Heterostructures using Contactless Photo-electrochemical (CL-PEC) Technique

*Y. Oki¹, T. Togashi¹, N. Shiozawa¹, R. Ochi¹, T. Sato¹ (1. Research Center for Integrated Quantum Electronics, Hokkaido University)

Contactless photo-electrochemical (CL-PEC) etching is performed by immersing a sample with a cathode pad in a solution containing an oxidant and irradiating it with ultra-violet (UV) light. It is very simple set-up and is one of the most promising wet etching techniques for nitride semiconductors such as GaN and AlGaN. In this study, we have demonstrated the deep and shallow etching of AlGaN/GaN structures by optimizing the CL-PEC conditions