Growth

[LEDIA6-02] Fabrication of high-quality Al-polar and N-polar AlN templates through self-forming tiny-pits layer

*Narihito Okada¹, Aina Hiyama Zazuli¹, Daisuke Inahara¹, Taketo Kowaki¹, Minagi Miyamoto¹, Kai Fujii¹, Ryosuke Ninoki¹, Sora Nagata¹, Taisei Kimoto¹, Satoshi Kurai¹, Yoshihiro Sugawara², Daisaku Yokoe², Yongzhao Yao², Yukari Ishikawa², Yoichi Yamada¹ (1. Yamaguchi University, 2. Japan Fine Ceramics Center)

A fabrication technique for high-quality AlN templates with a tiny-pit AlN layer is proposed. The dislocation density and radius of curvature of the AlN layer were improved. The N-polar AlN layer was grown using Al-polar tiny-pit AlN layers through polarity inversion. As a result, the Al-polar tiny-pit AlN was very effective in improving the crystalline quality of the N-polar AlN layer.