Growth

[LEDIA6-06] Using solid AlCl3 for homoepitaxial growth of thick AlN layers by HVPE

*T. Nukaga¹, H Sakano², T. Nishida^2,1, T. Kai¹, M. M. Tsuchiya¹, K. Sasakura¹, Y. Y. Kumagai² (1. Stanley Electric Co., Ltd, 2. Tokyo University of Agriculture and Technology)

HVPE-AlN layers were grown on +c planes of PVT-AlN(0001) substrates using solid AlCl3 (5N grade) as Al source. Crystal quality of these HVPE-AlN layers was found to be comparable to that of PVT-AlN substrates.