*Wei-Lon Wei1, Tzu-Chi Huang3,1, Yu-Hao Wu4,1, Chien-Yu Lee1, Bo-Yi Chen1, Gung-Chian Yin1, Bi-Hsuan Lin1, Fang-Yuh Lo2, Mau-Tsu Tang1
(1. National Synchrotron Radiation Research Center, Hsinchu 300092, Taiwan, 2. Department of Physics, National Taiwan Normal University, Taipei 11677, Taiwan, 3. Department of Chemical Engineering, National United University , Miaoli 360302, Taiwan, 4. Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan)
The Eu-doped ZnO thin film samples had been deposited via pulsed-laser deposition. PL, XANES and XRF mapping had been utilized to characterize the samples.
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