ポスター発表2

[2P73] Improve Charge Transfer under Strong Coupling Conditions via Interfacial Modulation

*En Cao¹, Xu Shi², Yocefu Hattori¹, Quan Sun¹, Tomoya Oshikiri³, Hiroaki Misawa^1,4 (1. Research Institute for Electronic Science, Hokkaido University, 2. Creative Research Institution, Hokkaido University, 3. Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 4. National Yangming Jiaotong University)

キーワード：Localized surface plasmon, Interfacial modification, Charge transfer