Blanka Magyari-Köpe¹, Hans Hsu², *Jeff Wu² (1. Taiwan Semiconductor Manufacturing Company Technology Inc., San Jose, CA, USA, 2. Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW)

Antoine Jay¹, Clément Mesnard¹, Isobel Nicholson², Rémi Helleboid², Gabriel Mugny², *Denis Rideau², Vincent Goiffon³, Layla Martin-Samo⁵, Nicolas Richard⁴, Anne Hémeryck¹ (1. Lab. d'analyse et d'architecture des systèmes, CNRS, Univ. de Toulouse, 2. ST Microelectronics, 3. ISAE-SUPAERO, 4. CEA/DIF, Bruyères-le-Châtel, 5. CNR-IOM, Democritos National Simulation Center, Istituto Officina dei Materiali, c/o SISSA)

*Mina Bahrami¹, Dominic Waldhoer¹, Pedram Khakbaz¹, Theresia Knobloch¹, Tibor Grasser¹ (1. TU Wien Univ.)

*Christoph Wilhelmer^1,2, Dominic Waldhoer², Diego Milardovich², Michael Waltl¹, Tibor Grasser² (1. Christian Doppler Lab. for Single-Defect Spectroscopy in Semiconductor Devices at the Inst. for Microelectronics, 2. Inst. for Microelectronics, Technische Univ. Wien)

*Mengqi Fan¹, Xujin Song¹, Fei Liu¹, Xiaoyan Liu¹ (1. Peking Univ.)