Oral

[Session 11] Quantum Computing and Spintronics

Fri. Sep 29, 2023 1:00 PM - 2:40 PM Hall A

Chair: Hajime Tanaka (Osaka Univ.), Satofumi Souma (Kobe Univ.)

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1:00 PM - 1:20 PM

[Session_11-01] Variability in Si/SiGe and Si/SiO₂ Spin Qubits due to Interfacial Disorder

*Lukas Cvitkovich¹, Dominic Waldhör¹, Yann-Michel Niquet², Tibor Grasser¹ (1. Institute for Microelectronics, Technische Universität Wien, 2. Univ. Grenoble Alpes, CEA, IRIG-MEM-L Sim)

1:20 PM - 1:40 PM

[Session_11-02] Improving the tight-binding description of spin-orbit interaction in Si/Ge heterostructure for qubits applications

*Gaëtan Veste¹, Esteban A. Rodríguez-Mena², Benoit Sklénard¹, Jing Li¹, Yann-Michel Niquet² (1. Univ. Grenoble Alpes, CEA, Leti, 2. Univ. Grenoble Alpes, CEA, IRIG-MEM-L_Sim)

1:40 PM - 2:00 PM

[Session_11-03] Robust Sub-Kelvin Simulations of Quantum Dot Charge Sensing

*Raphaël J. Prentki¹, Felix Fehse^1,2, Pericles Philippopoulos¹, Chenyi Zhou¹, Hong Guo^1,2, Marek Korkusinski³, Félix Beaudoin¹ (1. Nanoacademic Tech. Inc., 2. Dept. of Physics, McGill Univ., 3. Security and Disruptive Tech., National Res. Council of Canada)

2:00 PM - 2:20 PM

[Session_11-04] Performance Comparison of Capping Layer Materials For Double Spin-Torque Magnetic Tunnel Junctions

*Anders Blom¹, Shela Aboud², Julian Schneider¹, Jan-Niclas Luy¹, Troels Markussen¹ (1. Synopsys Denmark, 2. Synopsys Inc.)

2:20 PM - 2:40 PM

[Session_11-05] Spin Drift-Diffusion Boundary Conditions for FEM Modeling of Multilayer SOT Devices

*Nils Petter Jørstad^1,2, Wolfgang Goes³, Siegfried Selberherr², Viktor Sverdlov^1,2 (1. Christian Doppler Lab. for Nonvolatile Memory and Logic, 2. TU Wien, Inst. of Microelectronics, 3. Silvaco Europe Ltd.)

Session information

[Session 11] Quantum Computing and Spintronics

[Session_11-01] Variability in Si/SiGe and Si/SiO₂ Spin Qubits due to Interfacial Disorder

[Session_11-02] Improving the tight-binding description of spin-orbit interaction in Si/Ge heterostructure for qubits applications

[Session_11-03] Robust Sub-Kelvin Simulations of Quantum Dot Charge Sensing

[Session_11-04] Performance Comparison of Capping Layer Materials For Double Spin-Torque Magnetic Tunnel Junctions

[Session_11-05] Spin Drift-Diffusion Boundary Conditions for FEM Modeling of Multilayer SOT Devices

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Session information

[Session 11] Quantum Computing and Spintronics

[Session_11-01] Variability in Si/SiGe and Si/SiO2 Spin Qubits due to Interfacial Disorder

[Session_11-02] Improving the tight-binding description of spin-orbit interaction in Si/Ge heterostructure for qubits applications

[Session_11-03] Robust Sub-Kelvin Simulations of Quantum Dot Charge Sensing

[Session_11-04] Performance Comparison of Capping Layer Materials For Double Spin-Torque Magnetic Tunnel Junctions

[Session_11-05] Spin Drift-Diffusion Boundary Conditions for FEM Modeling of Multilayer SOT Devices

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[Session_11-01] Variability in Si/SiGe and Si/SiO₂ Spin Qubits due to Interfacial Disorder