Oral

[Session 10] Memories

Fri. Sep 29, 2023 9:10 AM - 11:30 AM Hall B

Chair: Kentaro Kukita (Kioxia), Jeff Wu (TSMC)

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9:10 AM - 9:30 AM

[Session_10-01] A Fully Coupled Multi-Physics Model to Simulate Phase Change Memory Operations in Ge-rich Ge₂Sb₂Te₅ Alloys

*Robin MIQUEL^1,2,3, Thomas CABOUT¹, Olga CUETO², Benoit SKLENARD², Mathis PLAPP³ (1. STMicroelectronics, 2. Univ. Grenoble Alpes, CEA, Leti, 3. Lab. de Physique de la Matière Condensée, Ecole Polytechnique, CNRS, Institut Polytechnique de Paris)

9:30 AM - 9:50 AM

[Session_10-02] TCAD Modeling of Germanium Behavior During Forming Operation in Ge-Rich ePCM

*Matteo Baldo¹, Luca Laurin³, Elisa Petroni², Daniele Ielmini², Roberto Annunziata³, Andrea Redaelli³ (1. STMicroelectronics, Politecnico di Milano, 2. Politecnico di Milano, 3. STMicroelectronics)

9:50 AM - 10:10 AM

[Session_10-03] TCAD Modeling of Carbon Electrode for Highly Accurate Reset Current Prediction of Phase Change Memory Considering Both Thermal and Electronic Transport

*Takayuki Tsukagoshi¹, Hiroki Tokuhira¹, Tsukasa Nakai¹, Yuya Matsuzawa¹, Ryouji Masuda¹, Hironobu Furuhashi¹, Shosuke Fujii¹, Hiroyuki Ode¹, Naoki Kusunoki¹ (1. Kioxia Corp.)

10:30 AM - 10:50 AM

[Session_10-04] On the Plausibility of Thermodiffusion as the Primary Mechanism for Unipolar Resistive Switching in Metal-Oxide-Metal Memristive Devices

*Kristof Lange¹, Rainer Waser^1,2,3, Stephan Menzel² (1. Inst. of Materials in Electrical Engineering II (IWE 2), RWTH Aachen Univ., 2. Peter Grünberg Inst. (PGI-7), Forschungszentrum Jülich GmbH, 3. Peter Grünberg Inst. (PGI-10), Forschungszentrum Jülich GmbH)

10:50 AM - 11:10 AM

[Session_10-05] Advanced TCAD Modeling of HfO2-based ReRAM: Coupling Redox Reactions and Thermal Effects

*Youssef Hirchaou¹, François Triozon², Wolfgang Goes¹, Carl Hylin¹, Philippe Blaise¹, Jing Li² (1. Silvaco-France, 2. Univ. Grenoble Alpes, CEA, LETI)

11:10 AM - 11:30 AM

[Session_10-06] Study of Self-Heating and its Effects in SOT-STT-MRAM

*Tomas Hadamek¹, Nils Petter Jørstad¹, Wolfgang Goes³, Siegfried Selberherr², Viktor Sverdlov¹ (1. Christian Doppler Laboratory for Nonvolatile Magnetoresistive Memory and Logic at the Institute for Microelectronics, TU Wien, 2. Institute for Microelectronics, TU Wien, 3. Silvaco Europe Ltd., Cambridge, United Kingdom)

Session information

[Session 10] Memories

[Session_10-01] A Fully Coupled Multi-Physics Model to Simulate Phase Change Memory Operations in Ge-rich Ge₂Sb₂Te₅ Alloys

[Session_10-02] TCAD Modeling of Germanium Behavior During Forming Operation in Ge-Rich ePCM

[Session_10-03] TCAD Modeling of Carbon Electrode for Highly Accurate Reset Current Prediction of Phase Change Memory Considering Both Thermal and Electronic Transport

[Session_10-04] On the Plausibility of Thermodiffusion as the Primary Mechanism for Unipolar Resistive Switching in Metal-Oxide-Metal Memristive Devices

[Session_10-05] Advanced TCAD Modeling of HfO2-based ReRAM: Coupling Redox Reactions and Thermal Effects

[Session_10-06] Study of Self-Heating and its Effects in SOT-STT-MRAM

Authentication

Session information

[Session 10] Memories

[Session_10-01] A Fully Coupled Multi-Physics Model to Simulate Phase Change Memory Operations in Ge-rich Ge2Sb2Te5 Alloys

[Session_10-02] TCAD Modeling of Germanium Behavior During Forming Operation in Ge-Rich ePCM

[Session_10-03] TCAD Modeling of Carbon Electrode for Highly Accurate Reset Current Prediction of Phase Change Memory Considering Both Thermal and Electronic Transport

[Session_10-04] On the Plausibility of Thermodiffusion as the Primary Mechanism for Unipolar Resistive Switching in Metal-Oxide-Metal Memristive Devices

[Session_10-05] Advanced TCAD Modeling of HfO2-based ReRAM: Coupling Redox Reactions and Thermal Effects

[Session_10-06] Study of Self-Heating and its Effects in SOT-STT-MRAM

Authentication

[Session_10-01] A Fully Coupled Multi-Physics Model to Simulate Phase Change Memory Operations in Ge-rich Ge₂Sb₂Te₅ Alloys