[10] Memory Technology

[10-04] Physical mechanisms and Enhancement of Endurance Degradation of SiO_x:Ag-based Volatile Memristors

*Ruiyi Li^1,2, Haozhang Yang^1,2, Yizhou Zhang^1,2, Xujin Song^1,2, Nan Tang^1,2, Ruiqi Chen^1,2, Zheng Zhou^1,2, Weihai Bu³, Kai Zheng³, Jin Kang³, Lifeng Liu^1,2, Jinfeng Kang^1,2, Peng Huang^1,2 (1. Peking University (China), 2. Beijing Advanced Innovation Center for Integrated Circuits (China), 3. Semiconductor Technology Innovation Center (Beijing) Corporation (China))