セッション情報

Tweet

Oral Presentation

Focus Session 2 (Area1&2&8)

[F-9] CMOS and Memory Applications of Low Dimensional Materials I

2022年9月29日(木) 13:30 〜 15:15 201 (2F)

Session Chair: Toshifumi Irisawa (AIST), Hiroshi Naganuma (Tohoku Univ.)

+全てマイスケジュールに登録

13:30 〜 14:00

[F-9-01 (Invited)] Novel high-k insulator deposition on 2D materials for future electronics

〇Kosuke Nagashio¹ (1. Univ. of Tokyo (Japan))

Presentation style: On-site (in-person)

14:00 〜 14:15

[F-9-02] Realization of P-type MoTe2-TFET Via Laser-induced Doping Technique

〇Tianshun Xie¹, Kazuki Fukuda¹, Mengnan Ke¹, Nobuyuki Aoki¹ (1. Chiba University (Japan))

Presentation style: On-site (in-person)

14:15 〜 14:30

[F-9-03] Machine Learning Attack Resilient MoS₂ Fe-FET True Random Number Generator for Hardware Security in IoT: 0.7 pJ/bit Writing Energy, Self-Correction Function, and 1250 bit/s Seed Throughput

〇Yu-Chieh Chien¹, Heng Xiang¹, Jianze Wang¹, Yufei Shi¹, Xuanyao Fong¹, Kah-Wee Ang^1,2 (1. National Univ. of Singapore (Singapore), 2. Inst. of Materials Res. and Eng., A*STAR (Singapore))

Presentation style: On-site (in-person)

14:30 〜 14:45

[F-9-04] Moire Schottky Barriers for Lower Contact Resistances on layered MoS₂

〇John Robertson¹, Zhaofu Zhang¹, Yuzheng Guo² (1. Cambridge University (UK), 2. Wuhan University (China))

Presentation style: On-site (in-person)

14:45 〜 15:15

[F-9-05 (Invited)] Comparing h-BN and MgO as Tunnel Barriers in scaled Magnetic Tunnel Junctions

〇John Robertson¹ (1. Cambridge Univ. (UK))

Presentation style: On-site (in-person)

×

認証

×

Please log in to browse and/or download abstracts.
» 参加者用ログイン