2022 International Conference on Solid State Devices and Materials

講演情報

Oral Presentation

11: Advanced Materials: Synthesis / Crystal Growth / Characterization

[B-2] Wide Bandgap Materials

2022年9月27日(火) 14:00 〜 15:45 102 (1F)

Session Chair: Shingo Ogawa (Toray Res. Center, Inc.), Takuya Hoshi (NTT Device Technology Lab.)

15:00 〜 15:15

[B-2-03] Characterization of Ultra High-Concentration Nitrogen-doped CVD Diamond

〇Mayu Ueda1, Kyosuke Hayasaka1, Kyotaro Kanehisa1, Yasuhiro Takahashi1, Chiyuki Wakabayashi1, Taisuke Kageura2, Hiroshi Kawarada1,3 (1. Waseda Univ. (Japan), 2. National Inst. of Advanced Indus. Sci. and Tech. (Japan), 3. Kagami Memorial Res. Inst. for Materials Sci. and Tech. (Japan))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.B-2-03

The highest nitrogen-doped CVD diamond ([N] = 8×10^(20) [cm-3]) was prepared by adding the same amount of CO2 as CH4. These thin films were evaluated by X-ray diffractometer (XRD) - including a reciprocal space mapping (RSM) measurement, Raman spectroscopy, and cross-sectional TEM images. From the physical properties, it was found that under optimum gas mixture (CH4: 2.0 [%], CO2: 2.0 [%], N2: 8.0 [%], H2: 88.0 [%]), high quality crystal was obtained de-spite the highest nitrogen content.

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