15:15 〜 15:30
[B-2-04] Importance of dissolving source precursor of Ga(C5H7O2)3 with HCl in mist CVD for α-Ga2O3 growth
Presentation style: Online
https://doi.org/10.7567/SSDM.2022.B-2-04
We dissolved the source precursor of Ga(C5H7O2)3
with either hydrochloric acid (HCl) or nitric acid (HNO3)
in the mist chemical vapor deposition (mist CVD) growth
of α-Ga2O3 films on α-Al2O3 substrates. Enough film
thickness was obtained when HCl was used as a source
solvent, while less growth occurred when HNO3 was used.
With the increase of HCl concentration, it was observed
that the film thickness as well as grain size tended to increase. These results indicate that chloride ion plays an
important role in the mist CVD growth of α-Ga2O3.
with either hydrochloric acid (HCl) or nitric acid (HNO3)
in the mist chemical vapor deposition (mist CVD) growth
of α-Ga2O3 films on α-Al2O3 substrates. Enough film
thickness was obtained when HCl was used as a source
solvent, while less growth occurred when HNO3 was used.
With the increase of HCl concentration, it was observed
that the film thickness as well as grain size tended to increase. These results indicate that chloride ion plays an
important role in the mist CVD growth of α-Ga2O3.
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