[C-2] Inorganic Semiconductor Materials & Applications

[C-2-02] Observation of Reaction Dynamics of GASnI3 Formation from Vacuum-deposited GAI and SnI2 Bi-layer Thin Films by In-situ Infrared MAIRS

〇Kazuki Shimada¹, Shingo Maruyama¹, Tetsuhiko Miyadera², Kenichi Kaminaga¹, Yuji Matsumoto¹ (1. Tohoku Univ. (Japan), 2. AIST (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.C-2-02

The reaction process of vacuum-deposited guani-dinium iodide (GAI) and SnI2 bi-layer thin films to form organic-inorganic hybrid material GASnI3 was investi-gated by using our originally developed in situ infrared (IR) multiple-angle incidence-resolved spectroscopy (MAIRS) – vacuum deposition system. The isothermal reaction process was analyzed quantitatively based on isotropic spectra which were constructed from IR MAIRS spectra. The time dependence of the formation ratio was found to strongly depend on the reaction temperature.