2022 International Conference on Solid State Devices and Materials

講演情報

Oral Presentation

09: Novel Functional / Quantum / Spintronic Devices and Materials

[C-8] Spintronics I

2022年9月29日(木) 10:45 〜 12:00 103 (1F)

Session Chair: Shinobu Ohya (Univ. of Tokyo), Hiromasa Shimizu (Tokyo Univ. of Agriculture and Technology)

11:15 〜 11:30

[C-8-02] Magnetic anisotropy of n-type ferromagnetic semiconductor (In, Fe)Sb studied by ferromagnetic resonance: Control by epitaxial strain

〇Akhil Sanjaya Kumar Pillai1, Shobhit Goel1, Le Duc Anh1,2,3, Masaaki Tanaka1,3 (1. Univ. of Tokyo (Japan), 2. PRESTO (Japan), 3. CSRN (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.C-8-02

We report the first comprehensive study on the magnetic anisotropy of n-type ferromagnetic semiconductor (FMS) (In,Fe)Sb grown on different buffer layers (InSb, AlSb, GaSb, InAs), using ferromagnetic resonance studies. When the epitaxial strain induced in (In,Fe)Sb is changed from tensile to compressive, we see a change in the values of magneto-crystalline anisotropy constant, favoring perpendicular magnetization. However, due to strong shape anisotropy, effective magnetization is still of in-plane nature. This work suggests the ability to control magnetic anisotropy in (In,Fe)Sb using strain.

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