2022 International Conference on Solid State Devices and Materials

講演情報

Oral Presentation

10: Thin Film Electronics: Oxide / Non-single Crystalline / Novel Process

[E-6] Advanced Oxide Sensors

2022年9月28日(水) 13:30 〜 15:30 105 (1F)

Session Chair: Keisuke Ide (Tokyo Tech), Yusaku Magari (Shimane Univ.)

15:15 〜 15:30

[E-6-07] Nitrogen incorporation in SnO2 matrix for passivation of oxygen vacancy and hole generation

〇Kotaro Watanabe1, Takuma Kawaguchi1, Shinya Aikawa1 (1. Kogakuin Univ. (Japan))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.E-6-07

For realization of high-performance p-type oxide-based semiconductors, nitrogen (N)-doping is one of the promising candidates. However, there still have unclear mechanism how hole is generated and where N atom is incorporated. In our previous study, we demonstrated n- to p-type conversion of SnOx film only by N2 annealing. Here, we show the role of N in n-type SnOx based on the detailed analysis of chemical binding states. The results suggest that N contributes important role in both VO passivation and hole generation in the SnOx film.

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