[F-1] Ferroelectric Memory Materials

[F-1-04] Demonstration of Ultra-thin Sub-10 nm Indium Oxide (In₂O₃) Field-Effect-Transistors (FETs) by Sputtering Deposition with Annealing-Free Toward BEOL Memory Applications

Zhao-Feng LOU¹, Chun-Yu Liao¹, Kuo-Yu Hsiang^1,2, Chen-Ying Lin¹, Jia-Yang Lee¹, Pin-Huan Chen³, Wei-Chang Ray¹, Zhi-Xian Li¹, Han-Chen Tseng¹, Fu-Sheng Chang¹, Chun-Chieh Wang¹, Jeng-Han Tsai³, Ming-Han Liao⁴, 〇Min-Hung Lee¹ (1. Inst. and Undergraduate Program of Electro-Optical Engineering, National Taiwan Normal Univ. (Taiwan), 2. Department of Electronics Engineering, National Yang Ming Chiao Tung Univ. (Taiwan), 3. Department of Electrical Engineering, National Taiwan Normal Univ. (Taiwan), 4. Department of Mechanical Engineering, National Taiwan Univ. (Taiwan))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.F-1-04

Sub-10 nm In2O3 Field-Effect-Transistors (FETs) by sputtering deposition with annealing-free is demonstrated for high on/off ratio 106 and low operation voltage 4V. The ultra-thin 4 nm and 10 nm of In2O3 are validated by HR-TEM and EDS, as well as the mobility extracted as 1 cm2/V.s and 4 cm2/V.s, respectively. The FeMFET of the proposed In2O3 FET with ferroelectric HfZrO2 capacitor shows hysteretic Threshold voltage shift for memory capability and is feasible for back end of line (BEOL) application.