2022 International Conference on Solid State Devices and Materials

講演情報

Oral Presentation

Focus Session 1 (Area1&2&9)

[G-3] Quantum Computing I

2022年9月27日(火) 16:15 〜 17:45 301 (3F)

Session Chair: Jun Yoneda, Masahiko Ishida (NEC Corp.)

17:00 〜 17:15

[G-3-03] Device Structure and Fabrication Process for MOS Type Silicon Spin Qubit Realizing Process-Variation-Robust two-Qubit SWAP Gate

〇Hidehiro Asai1, Shota Iizuka1, Tohru Mogami1, Junichi Hattori1, Koichi Fukuda1, Tsutomu Ikegami1, Kimihiko Kato1, Hiroshi Oka1, Takahiro Mori1 (1. National Institute of Advanced Industrial Science and Technology (AIST) (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.G-3-03

In this study, we propose a device structure, gate fabrication process, and back-bias-assisted operation for Si spin qubits, to realize high robustness of two-qubit SWAP gate operation against process variations. For the first time, we present a novel qubit design for 6σ yield SWAP gate operation with 99% fidelity assuming device size fluctuation of the IRDS target for 2022. These technologies provide a solution to complete a universal quantum gate set realizing universal quantum computers with silicon.

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