2022 International Conference on Solid State Devices and Materials

講演情報

Oral Presentation

08: Low Dimensional Devices and Materials

[H-3] Characterization II: Low Dimensional Devices and Materials

2022年9月27日(火) 16:15 〜 18:00 302 (3F)

Session Chair: Toshifumi Irisawa (AIST), Fumitaro Ishikawa (Hokkaido Univ.)

16:15 〜 16:30

[H-3-01] Revealing the role of oxygen on defect formation of MoS2 by combining thermal desorption spectroscopy and atomic layer deposition

〇Shuhong Li1, Tomonori Nishimura1, Mina Maruyama2, Susumu Okada2, Kosuke Nagashio1 (1. Univ. of Tokyo (Japan), 2. Univ. of Tsukuba (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.H-3-01

The stability of MoS2 is critical for device application, while no capable method is reported to trace the atomic scale defects for MoS2 on insulating SiO2/Si substrate. Herein, the defect formation of MoS2 was quantitatively investigated from the viewpoint of sulfur desorption by thermal desorption spectroscopy and also traced through defect selective oxide deposition by ALD. With annealing MoS2 even at ultra-high vacuum, the adsorbed oxygen molecule assists the sulfur atom to dissociate from MoS2 and thus defects are formed, suggesting that removal of adsorbed oxygen is key to avoiding degradation of MoS2

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