Toshitsugu Sakamoto¹, Makoto Miyamura¹, ^○Kazunori Funahashi¹, Munehiro Tada¹, Ken Uchida², Hiroki Ishikuro³ (1. NanoBridge Semiconductor, Inc. (Japan), 2. Univ. of Tokyo (Japan), 3. Keio Univ. (Japan))

^○Pierre EYBEN¹, Pierre De Keersgieter¹, Philippe Matagne¹, Thomas Chiarella¹, Clément Porret¹, Andriy Hikavyy¹, Yong Kong Siew¹, Ludovic Goux¹, Jérôme Mitard¹, Naoto Horiguchi¹ (1. Imec (Belgium))

^○Camila Cavalcante¹, H. Arimura¹, Y. Oniki¹, F. Sebaai¹, E. Capogreco¹, L-A. Ragnarsson¹, B.T. Chan¹, A. Hikavyy¹, H. Mertens¹, K. Vandersmissen¹, E. Dentoni Litta¹, S. Subramanian¹, S. Biesemans¹, N. Horiguchi¹ (1. imec (Belgium))

^○Luping Wang¹, Junkang Li¹, Rui Zhang¹ (1. Zhejiang Univ. (China))

^○Xinze Li¹, Sebastien Loubriat², Guillaume Besnard³, Christophe Maleville³, Olivier Weber⁴, Ran Cheng¹ (1. Zhejiang Univ. (China), 2. CEA-LETI Corp. (France), 3. SOITEC Corp. (France), 4. STMicroelectronics Corp. (France))

^○Jinghan Xu¹, Mengqi Fan¹, Zixuan Sun¹, Fei Liu¹, Xiaoyan Liu¹ (1. Peking University (China))

^○Junichi Hattori¹, Koichi Fukuda¹, Tsutomu Ikegami¹, Yoshihiro Hayashi¹ (1. AIST (Japan))