[K-4] Oxide Semiconductors for Logic and Memory

2023年9月7日(木) 10:45 〜 12:15 Room K (234, Bldg. 2)

Session Chairs: Mamoru Furuta (Kochi Univ. of Technology), Kasidit Toprasertpong (Univ. of Tokyo)

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10:45 〜 11:15

[K-4-01 (Invited)] Oxide Semiconductor Devices for Back-End-of-Line Applications

^○Xiao Gong¹ (1. National Univ. of Singapore (Singapore))

11:15 〜 11:45

[K-4-02 (Invited)] IGZO FET for Capacitorless DRAM Application

Xinlv Duan¹, Guanhua Yang¹, Ling Li¹, ^○Ming Liu^1,2 (1. Inst. of Microelectronics, Chinese Academy of Sci. (China), 2. Fudan Univ. (China))

11:45 〜 12:00

[K-4-03] Vertical-Channel Oxide Semiconductor FET with Off-State Leakage Current of 4.6 zA/μm

^○Masashi Oota¹, Toshiki Hamada¹, Minato Ito¹, Toshiki Mizuguchi¹, Hidetomo Kobayashi¹, Takanori Matsuzaki¹, Hiromi Sawai¹, Hitoshi Kunitake¹, Tatsuya Onuki¹, Hajime Kimura¹, Shunpei Yamazaki¹ (1. Semiconductor Energy Laboratory Co., Ltd. (Japan))

12:00 〜 12:15

[K-4-04] A Thin TiN _x Layer on Pt Electrode Based Hf _0.33Zr _0.66O ₂ Ferroelectric Memory

^○Asim Senapati¹, Zhao- Feng Lou², Fu- Sheng Chang², Yu- Rui Chen², Yi- Pin Chen^1,3, Shih- Yin Huang^3,4, Siddheswar Maikap^1,3, Chee- Wee Liu², Min- Hung Lee² (1. Chang Gung Univ. (Taiwan), 2. National Taiwan Univ. (Taiwan), 3. Keelung Chang Gung Memorial Hospital (Taiwan), 4. Chang Gung University College of Medicine (Taiwan))

セッション情報

[K-4] Oxide Semiconductors for Logic and Memory

[K-4-01 (Invited)] Oxide Semiconductor Devices for Back-End-of-Line Applications

[K-4-02 (Invited)] IGZO FET for Capacitorless DRAM Application

[K-4-03] Vertical-Channel Oxide Semiconductor FET with Off-State Leakage Current of 4.6 zA/μm

[K-4-04] A Thin TiN _x Layer on Pt Electrode Based Hf _0.33Zr _0.66O ₂ Ferroelectric Memory

認証

セッション情報

[K-4] Oxide Semiconductors for Logic and Memory

[K-4-01 (Invited)] Oxide Semiconductor Devices for Back-End-of-Line Applications

[K-4-02 (Invited)] IGZO FET for Capacitorless DRAM Application

[K-4-03] Vertical-Channel Oxide Semiconductor FET with Off-State Leakage Current of 4.6 zA/μm

[K-4-04] A Thin TiN x Layer on Pt Electrode Based Hf 0.33Zr 0.66O 2 Ferroelectric Memory

認証

[K-4-04] A Thin TiN _x Layer on Pt Electrode Based Hf _0.33Zr _0.66O ₂ Ferroelectric Memory