Compressive Strain Dependence on the Photoluminescence of Epitaxial Ge <sub>1-x</sub>Sn <sub>x</sub> Grown on Ge(100)

Rahmat Hadi SAPUTRO

doi:https://doi.org/10.7567/SSDM.2023.E-8-01

Presentation information

Oral Presentation

10: Thin Film Electronics: Oxide / Non‐single Crystalline / Novel Process

[E-8] Group IV cyrstal growth and applications

Fri. Sep 8, 2023 3:30 PM - 4:15 PM Room E (223, Bldg. 2)

Session Chairs: Kenta Moto (Kyushu Univ.), Toshiya Murakami (KIOXIA)

3:30 PM - 3:45 PM

[E-8-01] Compressive Strain Dependence on the Photoluminescence of Epitaxial Ge _1-xSn _x Grown on Ge(100)

^○Rahmat Hadi SAPUTRO^1,2, Tatsuro Maeda³, Ryo Matsumura¹, Naoki Fukata^1,2 (1. NIMS (Japan), 2. Univ. of Tsukuba (Japan), 3. AIST (Japan))

https://doi.org/10.7567/SSDM.2023.E-8-01

Abstract password authentication.
PA password is required to view abstracts. You can find the password in the "Advance Program".The "Advance Program" is handed out at the registration desk to registered participants.

Presentation information

[E-8] Group IV cyrstal growth and applications

[E-8-01] Compressive Strain Dependence on the Photoluminescence of Epitaxial Ge 1-xSn x Grown on Ge(100)

Password

[E-8-01] Compressive Strain Dependence on the Photoluminescence of Epitaxial Ge _1-xSn _x Grown on Ge(100)