A Thin TiN x Layer on Pt Electrode Based Hf 0.33Zr 0.66O 2 Ferroelectric Memory

Asim Senapati

doi:https://doi.org/10.7567/SSDM.2023.K-4-04

12:00 〜 12:15

[K-4-04] A Thin TiN _x Layer on Pt Electrode Based Hf _0.33Zr _0.66O ₂ Ferroelectric Memory

^○Asim Senapati¹, Zhao- Feng Lou², Fu- Sheng Chang², Yu- Rui Chen², Yi- Pin Chen^1,3, Shih- Yin Huang^3,4, Siddheswar Maikap^1,3, Chee- Wee Liu², Min- Hung Lee² (1. Chang Gung Univ. (Taiwan), 2. National Taiwan Univ. (Taiwan), 3. Keelung Chang Gung Memorial Hospital (Taiwan), 4. Chang Gung University College of Medicine (Taiwan))

https://doi.org/10.7567/SSDM.2023.K-4-04

Abstract password authentication.
A password is required to view abstracts. You can find the password in the "Advance Program".The "Advance Program" is handed out at the registration desk to registered participants.

講演情報

[K-4] Oxide Semiconductors for Logic and Memory

[K-4-04] A Thin TiN _x Layer on Pt Electrode Based Hf _0.33Zr _0.66O ₂ Ferroelectric Memory

パスワード

講演情報

[K-4] Oxide Semiconductors for Logic and Memory

[K-4-04] A Thin TiN x Layer on Pt Electrode Based Hf 0.33Zr 0.66O 2 Ferroelectric Memory

パスワード

[K-4-04] A Thin TiN _x Layer on Pt Electrode Based Hf _0.33Zr _0.66O ₂ Ferroelectric Memory