Theoretical Study of Nitrogen Incorporation at the Steps on SiC(0001) Surface during CVD Growth

Souichiro - Yamauchi

doi:https://doi.org/10.7567/SSDM.2023.M-1-03

講演情報

Oral Presentation

11: Advanced Materials: Synthesis / Crystal Growth / Characterization

[M-1] Wide Bandgap Materials

2023年9月6日(水) 14:00 〜 15:30 Room M (431, Bldg. 4)

Session Chairs: Shingo Ogawa (Toray Research Center, Inc.), Takuya Hoshi (NTT Device Technology Lab.)

15:00 〜 15:15

[M-1-03] Theoretical Study of Nitrogen Incorporation at the Steps on SiC(0001) Surface during CVD Growth

^○Souichiro - Yamauchi¹, Ichiro - Mizushima², Takashi - Yoda^2,3, Atushi - Oshiyama⁴, Kenji - Shiraishi^4,1 (1. Graduate School of Engineering, Univ. of Nagoya (Japan), 2. NuFlare Technology Inc. (Japan), 3. FIRST of Tokyo Tech. (Japan), 4. IMaSS, Univ. of Nagoya (Japan))

https://doi.org/10.7567/SSDM.2023.M-1-03

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講演情報

[M-1] Wide Bandgap Materials

[M-1-03] Theoretical Study of Nitrogen Incorporation at the Steps on SiC(0001) Surface during CVD Growth

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