Low-voltage operation of floating-gate type nonvolatile memory utilizing N-doped LaB 6 metal and LaB xN y insulator stacked structure

Eun-Ki Hong

doi:https://doi.org/10.7567/SSDM.2023.M-7-05

講演情報

Oral Presentation

11: Advanced Materials: Synthesis / Crystal Growth / Characterization

[M-7] Advanced Materials, Nanofabrication, and Thin Films III

2023年9月8日(金) 13:30 〜 15:15 Room M (431, Bldg. 4)

Session Chairs: Akihiko Kikuchi (Sophia Univ.), Kentaro Watanabe (Shinshu Univ.)

14:30 〜 14:45

[M-7-05] Low-voltage operation of floating-gate type nonvolatile memory utilizing N-doped LaB ₆ metal and LaB _xN _yinsulator stacked structure

^○Eun-Ki Hong¹, Shun-ichiro Ohmi¹, Secrytary Ohmi¹ (1. Tokyo Institute of Tech. (Japan))

https://doi.org/10.7567/SSDM.2023.M-7-05

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講演情報

[M-7] Advanced Materials, Nanofabrication, and Thin Films III

[M-7-05] Low-voltage operation of floating-gate type nonvolatile memory utilizing N-doped LaB 6 metal and LaB xN y insulator stacked structure

パスワード

[M-7-05] Low-voltage operation of floating-gate type nonvolatile memory utilizing N-doped LaB ₆ metal and LaB _xN _yinsulator stacked structure