Mobility enhancement in GaN-MOSFETs by surface Al doping

Katsunori Ueno

doi:https://doi.org/10.7567/SSDM.2023.N-1-02

講演情報

Oral Presentation

04: Power / High‐speed Devices and Materials

[N-1] GaN-based Power Devices

2023年9月6日(水) 14:00 〜 15:30 Room N (432, Bldg. 4)

Session Chairs: Toru Sugiyama (Toshiba Device & Strage Corporation), Heiji Watanabe (Osaka Univ.)

14:30 〜 14:45

[N-1-02] Mobility enhancement in GaN-MOSFETs by surface Al doping

^○Katsunori Ueno¹, Turugi Kondo¹, Ryo Tanaka¹, Shinya Takashima¹, Masaharu Edo¹, Tomoyuki Suwa² (1. Fuji Electric Co., Ltd. (Japan), 2. Tohoku Univ. (Japan))

https://doi.org/10.7567/SSDM.2023.N-1-02

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講演情報

[N-1] GaN-based Power Devices

[N-1-02] Mobility enhancement in GaN-MOSFETs by surface Al doping

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