Proton implantation: the last resort to solve bipolar degradation of SiC power devices?

Masashi Kato

doi:https://doi.org/10.7567/SSDM.2023.N-2-01

講演情報

Oral Presentation

04: Power / High‐speed Devices and Materials

[N-2] SiC Processes and Characterizations

2023年9月6日(水) 16:00 〜 17:30 Room N (432, Bldg. 4)

Session Chairs: Shinsuke Harada (National Institute of Advanced Industrial Science and Technology), Tomoya Ono (Kobe Univ.)

16:00 〜 16:30

[N-2-01 (Invited)] Proton implantation: the last resort to solve bipolar degradation of SiC power devices?

^○Masashi Kato¹, Shunta Harada², Hitoshi Sakane³ (1. Nagoya Inst. of Tech. (Japan), 2. Nagoya Univ. (Japan), 3. SHI-ATEX Co. Ltd. (Japan))

https://doi.org/10.7567/SSDM.2023.N-2-01

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講演情報

[N-2] SiC Processes and Characterizations

[N-2-01 (Invited)] Proton implantation: the last resort to solve bipolar degradation of SiC power devices?

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