Recent Progress towards high-performance lateral Ga2O3 FETs

Andrew Green

doi:https://doi.org/10.7567/SSDM.2023.N-7-01

講演情報

Oral Presentation

04: Power / High‐speed Devices and Materials

[N-7] Ga2O3-based Devices

2023年9月8日(金) 13:30 〜 15:00 Room N (432, Bldg. 4)

Session Chairs: Yongzhao Yao (Japan Fine Ceramics Center), Joel T. Asubar (Univ. of Fukui)

13:30 〜 14:00

[N-7-01 (Invited)] Recent Progress towards high-performance lateral Ga2O3 FETs

^○Andrew Green¹ (1. Air Force Res. Lab. (United States of America))

https://doi.org/10.7567/SSDM.2023.N-7-01

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講演情報

[N-7] Ga2O3-based Devices

[N-7-01 (Invited)] Recent Progress towards high-performance lateral Ga2O3 FETs

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