Trap Analysis of Normally-off Ga <sub>2</sub>O <sub>3</sub> MOSFET Enabled by Charge Trapping Layer Using Photon Stimulated Characterization

Minghao He

doi:https://doi.org/10.7567/SSDM.2023.N-7-02

14:00 〜 14:15

[N-7-02] Trap Analysis of Normally-off Ga ₂O ₃ MOSFET Enabled by Charge Trapping Layer Using Photon Stimulated Characterization

^○Minghao He^1,2, Mujun Li², Xiaohui Wang², Qing Wang², Hongyu Yu², Kah-Wee Ang¹ (1. National Univ. of Singapore (Singapore), 2. Southern Univ. of Sci. and Tech. (China))

https://doi.org/10.7567/SSDM.2023.N-7-02

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講演情報

[N-7] Ga2O3-based Devices

[N-7-02] Trap Analysis of Normally-off Ga ₂O ₃ MOSFET Enabled by Charge Trapping Layer Using Photon Stimulated Characterization

パスワード

講演情報

[N-7] Ga2O3-based Devices

[N-7-02] Trap Analysis of Normally-off Ga 2O 3 MOSFET Enabled by Charge Trapping Layer Using Photon Stimulated Characterization

パスワード

[N-7-02] Trap Analysis of Normally-off Ga ₂O ₃ MOSFET Enabled by Charge Trapping Layer Using Photon Stimulated Characterization