Comparative Study of Radiation Damage Effects on FinFET and GAAFET

Ching-Hung Chang

doi:https://doi.org/10.7567/SSDM.2023.PS-1-10

講演情報

Poster Session

01: Advanced CMOS: Material Science / Process Engineering / Device Technology

[PS-1] 01: Advanced CMOS: Material Science / Process Engineering / Device Technology

2023年9月7日(木) 15:00 〜 17:00 Shirotori Hall (Nagoya Congress Center)

[PS-1-10] Comparative Study of Radiation Damage Effects on FinFET and GAAFET

^○Ching-Hung Chang¹, Kuei-Shu Chang-Liao¹, Dun-Bao Ruan² (1. National Tsing Hua University (Taiwan), 2. Fuzhou University (China))

https://doi.org/10.7567/SSDM.2023.PS-1-10

Abstract password authentication.
A password is required to view abstracts. You can find the password in the "Advance Program".The "Advance Program" is handed out at the registration desk to registered participants.

講演情報

[PS-1] 01: Advanced CMOS: Material Science / Process Engineering / Device Technology

[PS-1-10] Comparative Study of Radiation Damage Effects on FinFET and GAAFET

パスワード