High Carrier Mobility of Sn-Doped Ge Thin-Films (<20 nm) by Thinning Combined with Post-Annealing

Taishiro Koga

doi:https://doi.org/10.7567/SSDM.2023.PS-11-04

講演情報

Poster Session

11: Advanced Materials: Synthesis / Crystal Growth / Characterization

[PS-11] 11: Advanced Materials: Synthesis / Crystal Growth / Characterization

2023年9月7日(木) 15:00 〜 17:00 Shirotori Hall (Nagoya Congress Center)

[PS-11-04] High Carrier Mobility of Sn-Doped Ge Thin-Films (<20 nm) by Thinning Combined with Post-Annealing

^○Taishiro Koga¹, Takaya Nagano¹, Kenta Moto¹, Keisuke Yamamoto¹, Taizoh Sadoh¹ (1. Kyushu Univ. (Japan))

https://doi.org/10.7567/SSDM.2023.PS-11-04

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講演情報

[PS-11] 11: Advanced Materials: Synthesis / Crystal Growth / Characterization

[PS-11-04] High Carrier Mobility of Sn-Doped Ge Thin-Films (<20 nm) by Thinning Combined with Post-Annealing

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