International Display Workshops General Incorporated Association

Proceedings of the International Display Workshops Volume 26 (IDW '19)

Proceedings of the International Display Workshops Volume 26 (IDW '19)

2019年11月27日 〜 2019年11月29日
Sapporo Convention Center

14:30 〜 17:00

[FMCp5-8L] Capacitance-Voltage Characteristics of Solution-Based HfZr-Silicate Gate Dielectrics

*Nara Lee1, Pyungho Choi1, Byoungdeog Choi1 (1. Sungkunkwan University(Korea))

HfZr-Silicate, High-k dielectrics, MOS, Solution process

https://doi.org/10.36463/idw.2019.0764

In this study, Al/(HfZrO4)1-x(SiO2)x/p-Si capacitors were fabricated and evaluated as a function of SiO2 content in the films. From the result, electrical properties enhanced such as oxide charge and breakdown voltage as the SiO2 concentration x increased and reliability improved as well.